MCP1406/07
4.0
4.1
APPLICATION INFORMATION
General Information
MOSFET drivers are high-speed, high current devices
V DD = 18V
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In high frequency switching power supplies, the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully-
off state to a fully-on state are characterized by the driv-
ers’ rise time (t R ), fall time (t F ), and propagation delays
(t D1 and t D2 ). The MCP1406/07 family of devices is
+5V
Input
Input
MCP1407
1 μF
0.1 μF
Ceramic
Output
C L = 2500 pF
90%
able to make this transition very quickly. Figure 4-1 and
Figure 4-2 show the test circuits and timing waveforms
0V
10%
used to verify the MCP1406/07 timing.
18V
Output
t D1 90%
t R
t D2
90%
t F
V DD = 18V
0V
10%
10%
1 μF
0.1 μF
Ceramic
FIGURE 4-2:
Non-Inverting Driver Timing
Waveform.
Input
Output
C L = 2500 pF
4.3
Decoupling Capacitors
MCP1406
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge capaci-
tive loads quickly. For example, 2.25A are needed to
+5V
Input
90%
charge a 2500 pF load with 18V in 20 ns.
To operate the MOSFET driver over a wide frequency
0V
18V
10%
t D1
90%
t F
t D2
t R
90%
range with low supply impedance, a ceramic and a low
ESR film capacitor are recommended to be placed in
parallel between the driver V DD and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
Output
placed between pins 1, 8 and 4, 5 should be used.
0V
10%
10%
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
FIGURE 4-1:
Waveform.
Inverting Driver Timing
source for the required current.
? 2006-2012 Microchip Technology Inc.
DS22019B-page 11
相关PDF资料
MCP14628T-E/MF IC MOSFET DVR 2A SYNC BUCK 8-DFN
MCP14700T-E/MF IC MOSFET DRIVER HIGH/LOW 8DFN
MCP14E3T-E/MF IC MOSFET DVR 4.0A DUAL 8DFN
MCP14E6T-E/MF IC MOSFET DRIVER 2A 8DFN-S
MCP14E9T-E/MF IC MOSFET DRIVER 3A 8DFN-S
MCP1640RD-4ABC BOARD REF DES AAAA BAT BOOST
MCP3906AT-E/SS IC ENERGY METERING 24SSOP
MCP3907T-I/SS IC ENERGY METER W/OSC 24SSOP
相关代理商/技术参数
MCP1406T-E/AT 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:6A High-Speed Power MOSFET Drivers
MCP1406T-E/MF 功能描述:功率驱动器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP1406T-E/PA 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:6A High-Speed Power MOSFET Drivers
MCP1406T-E/SN 功能描述:功率驱动器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP1407 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:6A High-Speed Power MOSFET Drivers
MCP1407-E/AT 功能描述:功率驱动器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP1407-E/MF 功能描述:功率驱动器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP1407-E/P 功能描述:功率驱动器IC 4.5A Dual MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube